? 2011 ixys all rights reserved 1 - 3 20110307 GWM100-0085X1 ixys reserves the right to change limits, test conditions and dimensions. v dss = 85 v i d25 = 103 a r dson typ. = 5.5 mw three phase full bridge with trench mosfets in dcb isolated high current package applications ac drives ? in automobiles - electric power steering - starter generator ? in industrial vehicles - propulsion drives - fork lift drives ? in battery supplied equipment features ? mosfets in trench technology: - low rdson - optimized intrinsic reverse diode ? package: - high level of integration - high current capability 300 a max. - aux. terminals for mosfet control - terminals for soldering or welding connections - isolated dcb ceramic base plate with optimized heat transfer ? space and weight savings package options ? 2 lead forms available - straight leads (sl) - smd lead version (smd) s2 l- l1 l2 l3 g2 s1 g1 s3 g3 s4 g4 s5 g5 s6 g6 l+ mosfets symbol conditions maximum ratings v dss t j = 25c to 150c 85 v v gs 20 v i d25 i d90 i d110 t c = 25c t c = 90c t c = 110c 103 77 68 a a a i f25 i f90 i f110 t c = 25c (diode) t c = 90c (diode) t c = 110c (diode) tbd tbd tbd a a a symbol conditions characteristic values (t j = 25 c, unless otherwise specifed) min. typ. max. r dson 1) on chip level at t j = 25c v gs = 10 v ; i d = 75 a t j = 125c 5.5 12.7 6.2 mw mw v gs(th) v ds = 20 v; i d = 250 a 2.0 4.0 v i dss v ds = v dss ; v gs = 0 v t j = 25c t j = 125c 100 5 a a i gss v gs = 20 v; v ds = 0 v 0.2 a q g q gs q gd v gs = 10 v; v ds = 42 v; i d = 75 a 114 30 35 nc nc nc t d(on) t r t d(off) t f inductive load v gs = 10 v; v ds = 42 v i d = 75 a; r g = 39 ?; t j = 125c tbd tbd tbd tbd ns ns ns ns e on e off e recoff tbd tbd tbd mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 1.3 1.0 1.6 k/w k/w 1) v ds = i d (r ds(on) + r pin to chip ) surface mount device straight leads t e n t a t i v e
? 2011 ixys all rights reserved 2 - 3 20110307 GWM100-0085X1 ixys reserves the right to change limits, test conditions and dimensions. component symbol conditions maximum ratings i rms per pin in main current paths (p+, n-, l1, l2, l3) may be additionally limited by external connections 300 a t j t stg -55...+175 -55...+125 c c v isol i isol < 1 ma, 50/60 hz, f = 1 minute 1000 v~ f c mounting force with clip 50 - 250 n symbol conditions characteristic values min. typ. max. r pin to chip 1) l+ to l1/l2/l3 or l- to l1/l2/l3 1.0 mw c p coupling capacity between shorted pins and mounting tab in the case 160 pf weight 25 g 1) v ds = i d (r ds(on) + r pin to chip ) source-drain diode symbol conditions characteristic values (t j = 25c, unless otherwise specifed) min. typ. max. v sd (diode) i f = 100 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 100 a; -di f /dt = 800 a/s; v r = 24 v t vj = 125c tbd tbd tbd ns c a t e n t a t i v e
? 2011 ixys all rights reserved 3 - 3 20110307 GWM100-0085X1 ixys reserves the right to change limits, test conditions and dimensions. leads ordering part name & packing unit marking part marking delivering mode base qty. ordering code straight standard gwm 100-0085x1 - sl gwm 100-0085x1 blister 28 tbd smd standard gwm 100-0085x1 - smd gwm 100-0085x1 blister 28 tbd s traight l eads gwm 100-085x1-sl 1 0,05 5 0,05 0,5 0,02 25 +0,20 53 0,15 37,5 +0,20 1 0,05 (11x) 3 0,05 4 0,05 (3x) 6 0,05 12 0,05 1,5 4,5 2,1 s urface m ount d evice gwm 100-085x1-smd 25 +0,20 5 0,05 39 0,15 4 0,05 1 0,05 r1 0,2 0,5 0,02 5 2 1 0,05 5 0,10 (3x) 6 0,05 12 0,05 (11x) 3 0,05 37,5 +0,20 1,5 4,5 2,1 t e n t a t i v e
|
